An organotin photoresist composition for photolithography patterning is described, wherein organotin photoresist composition comprises a (stannocenyl oxide)tin compound, a solvent, and/or an additive. (Stannocenyl oxide)tin compound comprises cyclopentadienyl CHgroup, or substituted cyclopentadienyl CHR, CHR, CHR, CHR, or CR group. A method for photolithography patterning comprises depositing (stannocenyl oxide)tin compound photoresist composition over a substrate to form a photoresist layer; exposing the (stannocenyl oxide)tin photoresist layer to actinic radiation to form a latent pattern; and developing the latent pattern by applying a developer to remove the unexposed or exposed portion of photoresists to form a photolithography pattern.
- 출원번호 : US2024/043933
- 출원인 : LU, Feng
- 특허번호 :
- IPC : G03F-007/004(2006.01);C07F-007/22(2006.01);