The present application discloses an indoor optical wireless communications-oriented general geometry-based stochastic channel modeling method, which belongs to the field of wireless communication channel modeling. The method includes: setting scenario layout and frequency band related parameters; generating an object reflection cluster birth-death process matrix and random numbers for controlling a blocking effect and propagation component classification; initializing a scattering cluster and intra-cluster scatterers; updating and calculating model parameters varying with space and time; calculating a light source radiation intensity, the power distributions of object reflection and particle scattering, and an equivalent reflection coefficient; and calculating a subchannel impulse response, and determining whether a propagation component exists, to generate a final channel impulse response. The general geometry-based stochastic channel modeling method for indoor optical wireless communications of the present invention can utilize the common characteristics of the wireless frequency bands of light and the unique characteristics of the frequency bands of infrared light, visible light and ultraviolet light. By setting corresponding parameters, the established model can support different frequency bands to be flexibly applied to the simulation and performance evaluation of 6G indoor optical wireless communication systems.

• 출원번호 : 18813519
• 출원인 : WANG, Chengxiang
• 특허번호 :
• IPC : H04B-010/073(2006.01);H04B-010/114(2006.01);H04B-010/50(2006.01);H04B-017/391(2006.01);

A method for manufacturing and applying a metal oxide coating for shielding an object from particle radiation includes heating a quantity of a resin of a polyurethane system and mixing a metal oxide with the quantity of the resin of the polyurethane system to form a mixture. The method further includes mixing a quantity of a hardener of the polyurethane system with the mixture to form a metal oxide infused conformal coating (MOICC). The method further includes applying the MOICC to an object to shield the object from particle radiation and curing the MOICC.

• 출원번호 : 18814002
• 출원인 : Hayes, Robert Bruce
• 특허번호 :
• IPC : C08K-003/22(2006.01);C09D-005/32(2006.01);C09D-007/61(2006.01);C09D-175/04(2006.01);

While pulse oximetry is a frequently used patient monitoring technique to measure blood oxygen saturation, conventional pulse oximetry devices often contain materials and/or mechanisms that are negatively affected by high magnetic fields, thereby preventing reliable results and/or creating additional health risks to patients. Thus, the present disclosure describes a pulse oximetry device adapted for use in high-magnetic field environments, wherein the pulse oximetry device comprises a wearable element having a radiation conveying element and one or more photodetectors, and the wearable element is connected to an associated measurement device via a hybrid cable comprising one or more optical waveguides and high impedance cabling. Methods of performing pulse oximetry using the devices and hybrid cable are also described.

• 출원번호 : EP2024/073653
• 출원인 : KONINKLIJKE PHILIPS N.V.
• 특허번호 :
• IPC : A61B-005/1455(2006.01);A61B-005/055(2006.01);A61B-005/00(2006.01);

The present invention relates to a composition capable of preventing inflammatory diseases caused by radiation therapy, or use thereof. Tranilast of the present invention can reduce rectal wall infiltration of mast cells and provide an anti-inflammatory effect against radiation-induced colitis, and thus radiation-induced inflammatory diseases can be effectively prevented when the tranilast of the present invention is pre-administered to patients in which radiation-induced inflammatory diseases have not yet occurred, such as patients receiving pelvic radiation therapy.

• 출원번호 : KR2024/012631
• 출원인 : THE CATHOLIC UNIVERSITY OF KOREA INDUSTRY-ACADEMIC COOPERATION FOUNDATION
• 특허번호 :
• IPC : A61K-031/196(2006.01);A61P-029/00(2006.01);A61P-039/00(2006.01);A23L-033/10(2016.01);

The present invention provides: an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (S) represented by general formula (S1) and an acid-decomposable resin (A) described in the specification; a resist film in which the actinic ray-sensitive or radiation-sensitive resin composition is used; a pattern-forming method; and a method for manufacturing an electronic device.

• 출원번호 : JP2024/030063
• 출원인 : FUJIFILM CORPORATION
• 특허번호 :
• IPC : G03F-007/004(2006.01);C07C-309/41(2006.01);C07C-309/58(2006.01);C07C-317/44(2006.01);C07C-323/66(2006.01);C07C-381/12(2006.01);G03F-007/20(2006.01);G03F-007/038(2006.01);G03F-007/039(2006.01);

• 출원번호 : JP2024/030036
• 출원인 : THE UNIVERSITY OF TOKYO
• 특허번호 :
• IPC : F25B-009/00(2006.01);H10N-060/30(2023.01);

Embodiments of the present invention provide an antenna structure. The antenna structure comprises: a radiator having a length in a second direction that successively increases in a first direction perpendicular to the second direction on a plane; an auxiliary radiator arranged to be spaced apart from the radiator and having a length in the second direction that successively increases in the opposite direction to the first direction; and a parasitic element disposed between the radiator and the auxiliary radiator. A wideband antenna structure capable of multiband radiation is provided.

• 출원번호 : KR2024/012590
• 출원인 : DONGWOO FINE-CHEM CO., LTD.
• 특허번호 :
• IPC : H01Q-005/307(2015.01);H01Q-005/378(2015.01);H01Q-005/50(2015.01);

Vertical semiconductor devices with deep wells and associated fabrication methods are disclosed herein. A disclosed process for forming a semiconductor device includes forming, on a drift region having a first conductivity type, a deep well region for the semiconductor device. The deep well region can be formed by an implant. The deep well region has a second conductivity type. The deep well region of the second conductivity type leaves a portion of the surface of the drift region exposed. The process also includes epitaxially forming a semiconductor region that extends from the surface of the drift region to above the deep well region for the semiconductor device. The semiconductor region can be used as at least a part of the main operational current path of the semiconductor device when the semiconductor device is finished and is devoid of implant damage from the implant.

• 출원번호 : 18813547
• 출원인 : Snyder, David Lee
• 특허번호 :
• IPC : H01L-023/552(2006.01);H01L-029/06(2006.01);H01L-029/66(2006.01);H01L-029/78(2006.01);

A product having ultraviolet radiation protection and antimicrobial protection has a quantity of synthetic material, a quantity of zinc oxide particles with each particle having a surface, the quantity of zinc oxide particles in the range of 0.05 percent to 0.10 percent, and a quantity of a reactive group for modifying each surface of each zinc oxide particle, the quantity of the reactive group for incorporating the quantity of zinc oxide particles into the quantity of synthetic material prior to the quantity of synthetic material being formed into a fiber.

• 출원번호 : 18813445
• 출원인 : Kramer, Robert B.
• 특허번호 :
• IPC : C09C-001/04(2006.01);C01G-009/02(2006.01);C01G-009/03(2006.01);C08K-003/22(2006.01);C08K-009/02(2006.01);C08K-009/04(2006.01);C08K-009/06(2006.01);C09C-003/12(2006.01);C11D-003/12(2006.01);D01F-001/10(2006.01);D06M-011/44(2006.01);D06M-011/46(2006.01);D06M-011/50(2006.01);D06M-011/70(2006.01);D06M-013/288(2006.01);D06M-013/325(2006.01);D06M-013/368(2006.01);D06M-013/432(2006.01);D06M-013/51(2006.01);D06M-023/08(2006.01);D06M-101/06(2006.01);D06M-101/32(2006.01);D06M-101/34(2006.01);

PROBLEM TO BE SOLVED: To provide an illumination system for photodynamic therapy.SOLUTION: An illumination system 1 for photodynamic therapy includes an illumination source 2 configured to irradiate electromagnetic radiation 3 to irradiate a target surface 4 during operation, and an electronic control unit 5. The illumination source is configured to allow intensity of emitted electromagnetic radiation to change. The control unit is operably coupled to the illumination source and is configured to control operation of the illumination source according to an illumination protocol during an illumination session. The illumination protocol includes an instruction to operate the illumination source, and a mode includes a) a first mode, b) a second mode, and c) a third mode. Strength of the emitted electromagnetic radiation is lower during a dark period than during an illumination period, or the illumination source does not emit electromagnetic radiation during the dark period, while the illumination source emits electromagnetic radiation during the illumination period.SELECTED DRAWING: Figure 1

• 출원번호 : 2024142021
• 출원인 : MARUHO CO LTD
• 특허번호 :
• IPC : A61N-005/06(2006.01)