An organotin photoresist composition for photolithography patterning is described, wherein organotin photoresist composition comprises a (stannocenyl oxide) tin compound, a solvent, and/or an additive. (Stannocenyl oxide) tin compound comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H4R, C5H3R2, C5H2R3, C5HR4, or C5R5 group. A method for photolithography patterning comprises depositing (stannocenyl oxide)tin compound photoresist composition over a substrate to form a photoresist layer; exposing the (stannocenyl oxide)tin photoresist layer to actinic radiation to form a latent pattern; and developing the latent pattern by applying a developer to remove the unexposed or exposed portion of photoresists to form a photolithography pattern.
- 출원번호 : 18812202
- 출원인 : Lu, Feng
- 특허번호 :
- IPC : G03F-007/004(2006.01);G03F-007/16(2006.01);