The present disclosure is related to systems and methods for radiation. The method may include obtaining a plurality of reference images of a target of a subject and reference physiological motion information of the subject. The plurality of reference images and the reference physiological motion information may be acquired in a radiation period. The method may include establishing a correlation model based on the plurality of reference images and the reference physiological motion information. The method may include monitoring real-time motion information of the target based on the correlation model during a radiation operation performed during the radiation period.

• 출원번호 : 18922297
• 출원인 : SHANGHAI UNITED IMAGING HEALTHCARE CO., LTD.
• 특허번호 :
• IPC : A61N-005/10(2006.01);G06T-007/00(2006.01);G06T-007/246(2006.01);

In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

• 출원번호 : 18920346
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/00(2006.01);G03F-001/22(2006.01);G03F-001/36(2006.01);G03F-001/70(2006.01);G03F-007/40(2006.01);H01L-021/027(2006.01);

A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.

• 출원번호 : 18919818
• 출원인 : JSR CORPORATION
• 특허번호 :
• IPC : G03F-007/00(2006.01);C08K-005/5419(2006.01);C09D-133/06(2006.01);G03F-007/039(2006.01);G03F-007/075(2006.01);G03F-007/16(2006.01);H01L-021/027(2006.01);

A method for characterizing a lithography apparatus, in particular, a method for characterizing a lithography apparatus configured to cause an obscuration of radiation, as well as a lithography apparatus and a computer program product configured to carry out the methods. A method for characterizing a lithography apparatus; detecting first diffracted radiation of the lithography apparatus, wherein the first diffracted radiation was diffracted at a characterization element; determining a diffraction property of the characterization element based on at least in part the first substantially undiffracted radiation and the first diffracted radiation.

• 출원번호 : 18920238
• 출원인 : BUSCHLINGER, Robert
• 특허번호 :
• IPC : G03F-007/00(2006.01)

A zinc injection control method and apparatus, a zinc injection system, a computer device, a computer-readable storage medium, and a computer program product. The method comprises: controlling a zinc injection apparatus to perform zinc injection on a loop of a nuclear power plant at a preset zinc injection flow rate; acquiring a real-time zinc concentration and real-time parameters of a unit of the loop; and on the basis of the real-time zinc concentration, the real-time parameters of the unit of the loop and a standard concentration range, performing control on the zinc injection.

• 출원번호 : CN2024/125827
• 출원인 : CHINA NUCLEAR POWER ENGINEERING CO., LTD.;CHINA NUCLEAR POWER DESIGN COMPANY LTD. (SHENZHEN);
• 특허번호 :
• IPC : G21D-003/08(2006.01);G21F-009/00(2006.01);G21C-017/022(2006.01);

A system of shields designed to provide substantially greater protection, head to toe, against radiation exposure to health care workers in a hospital room during procedures which require real-time imaging. The shields are placed around the patient and the x-ray table and provide protection even when the x-ray tube is moved to various angles around the patient.

• 출원번호 : 18919281
• 출원인 : Egg Medical, Inc.
• 특허번호 :
• IPC : A61B-006/10(2006.01);A61B-006/00(2006.01);G21F-001/12(2006.01);G21F-003/00(2006.01);

A method for assembling an adjustable collimator for spatially fractionated radiation therapy is disclosed. Penetrating sheets that can transmit rays are stacked to form penetration sections, and the quantity of penetrating sheets is calculated. The thickness of each penetration section corresponds to the width of each radiation area. Shielding sheets that can block rays are stacked to form shielding sections, and the quantity of shielding sheets is calculated, with the thickness of each shielding section corresponding to the spacing between the radiation areas. The penetration sections and shielding sections form a collimation module, with shielding sections on opposite sides. Penetration and shielding sections of different thicknesses are assembled based on the radiation range and the radiation area spacing. Since the thickness of the penetration and shielding sections can be adjusted as needed, it can be applied to spatially fractionated radiation therapy with different requirements, achieving cost reduction.

• 출원번호 : 18918325
• 출원인 : Sichuan Cancer Hospital
• 특허번호 : 12217883
• IPC : G21K-001/02(2006.01);G21K-001/04(2006.01);

A main object of the present invention is to provide a novel crystal of 2-{4-N-(5,6-diphenylpyrazin-2-yl)-N-isopropylaminobutyloxy}acetic acid (hereinafter referred to as “Compound B”). A form-I crystal of Compound B, which shows peaks at diffraction angles (2θ) of 6.4°, 8.1°, 9.5°, 10.9°, 13.2°, 15.7°, 17.0°, 19.5°, 20.3°, 21.0°, and 22.8° in a powder X-ray diffraction spectrum obtained using a Cu-Kα radiation (λ=1.54 Å). A form-II crystal of Compound B, which shows peaks at diffraction angles (2θ) of 9.6°, 11.4°, 11.7°, 16.3°, 17.5°, 18.5°, 18.7°, 19.9°, 20.1°, 21.0°, and 24.6° in a powder X-ray diffraction spectrum obtained using a Cu-Kα radiation (λ=1.54 Å).

• 출원번호 : 18918427
• 출원인 : NIPPON SHINYAKU CO., LTD.
• 특허번호 :
• IPC : C07D-241/20(2006.01);C07D-241/26(2006.01);

Semiconductor devices with antennas and electromagnetic interference (EMI) shielding, and associated systems and methods, are described herein. In one embodiment, a semiconductor device includes a semiconductor die coupled to a package substrate. An antenna structure is disposed over and/or adjacent the semiconductor die. An electromagnetic interference (EMI) shield is disposed between the semiconductor die and the antenna structure to shield at least the semiconductor die from electromagnetic radiation generated by the antenna structure and/or to shield the antenna structure from interference generated by the semiconductor die. A first dielectric material and/or a thermal interface material can be positioned between the semiconductor die and the EMI shield, and a second dielectric material can be positioned between the EMI shield and the antenna structure. In some embodiments, the semiconductor device includes a package molding over at least a portion of the antenna, the EMI shield, and/or the second dielectric material.

• 출원번호 : 18918757
• 출원인 : Fay, Owen R.
• 특허번호 :
• IPC : H01L-023/552(2006.01);H01L-021/56(2006.01);H01L-023/31(2006.01);H01L-023/66(2006.01);H01Q-001/22(2006.01);

An apparatus and method produce, from a Gaussian laser pulse, a sequence of laser rings having a spatiotemporal configuration such that impingement of the laser rings on a surface of a nuclear material in a target assembly produces constructively interfering shock waves that converge on a focal region of the nuclear material, thereby producing sufficient pressures and temperatures to form tritium in the focal region. The temporal and/or spatial intervals between the concentric pulsed laser rings are adjusted to substantially match propagation times of impingement from one ring to the next in a shock propagation layer of the target assembly. A second laser or neutron tube may be used to create a cavitation bubble at the focus. In addition to the shock waves generated in the plane of the surface, through-plane shock waves can be generated to increase the overall shock pressure.

• 출원번호 : 18917271
• 출원인 : Massachusetts Institute of Technology
• 특허번호 :
• IPC : G21G-001/12(2006.01);G21B-001/03(2006.01);G21B-001/13(2006.01);G21B-001/19(2006.01);G21B-001/23(2006.01);G21G-001/00(2006.01);