A method of cleaning a reticle includes applying ozone fluid over a surface of the reticle, and while the ozone fluid is over the surface of the reticle, irradiating the surface of the reticle with ultraviolet (UV) radiation for an irradiation time to treat the surface of the reticle. The method of cleaning the reticle further includes adjusting the irradiation time based on a reflected UV beam from the surface of the reticle.

• 출원번호 : 18788007
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/00(2006.01)

A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.

• 출원번호 : 18787004
• 출원인 : Lee, Chih-Jie
• 특허번호 :
• IPC : G03F-009/00(2006.01);G03F-007/20(2006.01);

A process for the treatment of a hydrocracking unit bottoms stream containing heavy poly-nuclear aromatic (HPNA) compounds and/or a fresh hydrocracking feedstock stream containing HPNA precursors to produce coke. The HPNA and/or HPNA precursors are removed from the hydrocracking unit bottoms stream and/or a fresh hydrocracking feedstock stream by solvent washing, and the HPNA and/or HPNA precursors are subjected to delayed coking for the production of coke.

• 출원번호 : 18786961
• 출원인 : SAUDI ARABIAN OIL COMPANY
• 특허번호 :
• IPC : C10B-057/06(2006.01);C10B-057/00(2006.01);C10B-057/04(2006.01);

A production method including: a step of forming, on a substrate layer containing a polypropylene resin or a polyester resin, a metal oxide layer by a vacuum film forming process; a step of applying a gas barrier coating layer-forming composition on the metal oxide layer to form a coating film; a step of preheating the coating film by infrared radiation; and a step of heating and thereby curing the coating film preheated by infrared radiation in an atmosphere at 50 to 120° C. to form a gas barrier coating layer, in which the gas barrier coating layer-forming composition contains at least one selected from the group consisting of an alkyl silicon alkoxide and its hydrolysate, and a water-soluble polymer.

• 출원번호 : 18787875
• 출원인 : TOPPAN HOLDINGS INC.
• 특허번호 :
• IPC : B05D-007/02(2006.01);B05D-003/02(2006.01);B05D-007/00(2006.01);B65D-065/42(2006.01);C23C-014/10(2006.01);C23C-014/24(2006.01);

An interactive object system includes an interactive object and a source of electromagnetic radiation, e.g., an external source. A power harvesting device of the interactive object receives and harvests power from the electromagnetic radiation to power a special effect system of the interactive object. In an embodiment, the interactive object includes a retroreflective material that reflects electromagnetic radiation, which may be of a same or different wavelength as the electromagnetic radiation from which power is harvested. The interactive object system detects the reflected electromagnetic radiation, which may be used to trigger one or more additional actions related to the interactive object.

• 출원번호 : 18787756
• 출원인 : Yeh, Wei Cheng
• 특허번호 :
• IPC : G02B-005/126(2006.01);A63G-031/00(2006.01);H02J-050/00(2006.01);H04N-005/33(2006.01);

An exposure tool is configured to remove contaminants and/or prevent contamination of mirrors and/or other optical components included in the exposure tool. In some implementations, the exposure tool is configured to flush and/or otherwise remove contaminants from an illuminator, a projection optics box, and/or one or more other subsystems of the exposure tool using a heated gas such as ozone (O3) or extra clean dry air (XCDA), among other examples. In some implementations, the exposure tool is configured to provide a gas curtain (or gas wall) that includes hydrogen (H2) or another type of gas to reduce the likelihood of contaminants reaching the mirrors included in the exposure tool. In this way, the mirrors and one or more other components of the exposure tool are cleaned and maintained in a clean environment in which radiation absorbing contaminants are controlled to increase the performance of the exposure tool.

• 출원번호 : 18785022
• 출원인 : CHANG, Kai-Chieh
• 특허번호 :
• IPC : G03F-007/00(2006.01);G02B-005/08(2006.01);

In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1≤a≤2, b≥1, c≥1, and b+c≤4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

• 출원번호 : 18786266
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : H01L-021/027(2006.01);C23C-016/04(2006.01);C23C-016/455(2006.01);

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

• 출원번호 : 18785179
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/004(2006.01);G03F-007/00(2006.01);H01L-021/033(2006.01);

A method for treating a tumor, comprising identifying a tumor as a pancreatic cancer tumor and implanting in the tumor identified as a pancreatic cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source (21) with a suitable radon release rate and for a given duration, such that the source (21) provides during the given duration a cumulated activity of released radon between 5.6 Mega becquerel (MBq) hour and 11.6 MBq hour, per centimeter length.

• 출원번호 : 18783450
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)

A method for treating a tumor, comprising identifying a tumor as a breast cancer tumor and implanting in the tumor identified as a breast cancer tumor, as least one diffusing alpha-emitter radiation therapy (DaRT) source with a suitable radon release rate and for a given duration, such that the source provides during the given duration a cumulated activity of released radon between 3.5 Mega becquerel (MBq) hour and 9 MBq hour, per centimeter length.

• 출원번호 : 18783462
• 출원인 : Kelson, Itzhak
• 특허번호 :
• IPC : A61N-005/10(2006.01)