There are provided: a compression plate for a medical imaging apparatus, which is used in a medical imaging apparatus including a radiation generation unit, a radiation detection unit, an ultrasound probe, and an imaging table disposed between the radiation generation unit and the radiation detection unit and which is used for compressing a subject by sandwiching the subject between the imaging table and the compression plate, the compression plate for a medical imaging apparatus including a polymethylpentene resin-containing material having a bending elastic modulus of 1 GPa or more and a thermal deformation temperature of 100° C. or higher, in which the polymethylpentene resin-containing material contains a polymethylpentene compound containing 1 to 300 ppm of a sulfur element based on mass; a polymethylpentene resin-containing material that is suitably used for the compression plate; and a medical imaging apparatus having the compression plate.

• 출원번호 : 18790634
• 출원인 : FUJIFILM Corporation
• 특허번호 :
• IPC : A61B-006/04(2006.01);A61B-006/00(2006.01);A61B-006/50(2006.01);A61B-008/00(2006.01);A61B-008/08(2006.01);

The device comprises at least a laser source (5); an optical fiber (1) with an optical radiation entrance end (1.2) and an optical radiation output end (1.1); and a coupling system (8) for coupling the laser source (5) and the optical fiber (1), adapted to inject an optical radiation emitted by the laser source (5) into the entrance end (1.2) of the optical fiber (1). The optical fiber (1) is a multi-mode optical fiber. The coupling system (8) is adapted to inject the optical radiation into the optical fiber (1) with such an inclination (a) as to reduce or eliminate the fundamental transmission mode and to promote the transmission according to at least one higher-order transmission mode The optical radiation at the output end (1.1) of the optical fiber (1) has a cone-shaped distribution (3) wherein the intensity is maximal on the peripheral volume of an emission cone and is minimal inside the emission cone.

• 출원번호 : 18790316
• 출원인 : MASOTTI, Leonardo
• 특허번호 :
• IPC : A61B-018/24(2006.01);A61B-018/00(2006.01);A61B-018/20(2006.01);A61B-018/22(2006.01);

Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1≤a≤2, b≥1, c≥1, and b+c≤5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

• 출원번호 : 18790000
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/16(2006.01);G03F-007/11(2006.01);G03F-007/20(2006.01);H01L-021/027(2006.01);

In an example method of forming a waveguide part having a predetermined shape, a photocurable material is dispensed into a space between a first mold portion and a second mold portion opposite the first mold portion. A relative separation between a surface of the first mold portion with respect to a surface of the second mold portion opposing the surface of the first mold portion is adjusted to fill the space between the first and second mold portions. The photocurable material in the space is irradiated with radiation suitable for photocuring the photocurable material to form a cured waveguide film so that different portions of the cured waveguide film have different rigidity. The cured waveguide film is separated from the first and second mold portions. The waveguide part is singulated from the cured waveguide film. The waveguide part corresponds to portions of the cured waveguide film having a higher rigidity than other portions of the cured waveguide film.

• 출원번호 : 18790541
• 출원인 : Bhagat, Sharad D.
• 특허번호 :
• IPC : B29D-011/00(2006.01);B29C-035/08(2006.01);B29C-039/26(2006.01);B29L-011/00(2006.01);

A lithography system for extreme ultraviolet (EUV) radiation includes a housing (25) with an interior (24) containing a residual gas (27), and at least one gas-binding component (29) which is arranged in the interior (24) and has a gas-binding material for binding contaminating substances (28). The gas-binding component (29) has at least one flow duct (33) having at least one surface with the gas-binding material, with a gas flow of the residual gas (27) in the flow duct (33) having a Knudsen number of between 0.01 and 5, preferably between 0.01 and 0.5, in particular between 0.01 and 0.3, and with a casing (26) which encapsulates a beam path of the EUV lithography system (1) being arranged in the interior (24) of the housing (25). The casing (26) preferably has an opening (37) with a maintenance shaft (36) in which the gas-binding component (29) is arranged.

• 출원번호 : 18790520
• 출원인 : KRUITHOF, Wilbert
• 특허번호 :
• IPC : G03F-007/00(2006.01)

A method of manufacturing a semiconductor device includes forming a target layer over a substrate and forming a chemically amplified photoresist layer over the target layer. The method further includes forming a metallic photoresist layer over the chemically amplified photoresist layer, and selectively exposing the metallic photoresist layer to actinic radiation. The method also includes removing portions of the metallic photoresist layer that were not exposed to the actinic radiation to form a patterned metallic photoresist layer, and flood exposing the patterned metallic photoresist layer and the chemically amplified photoresist layer to extreme ultraviolet (XUV) radiation. The method further includes removing portions of the chemically amplified photoresist layer not covered by the patterned metallic photoresist layer and the patterned metallic photoresist layer to form a patterned chemically amplified photoresist layer exposing portions of the target layer.

• 출원번호 : 18790799
• 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
• 특허번호 :
• IPC : G03F-007/09(2006.01);G03F-007/20(2006.01);H01L-021/027(2006.01);H01L-021/311(2006.01);

An image sensor device is disclosed. The image sensor device includes: a substrate having a front surface and a back surface; two adjacent radiation-sensing regions formed in the substrate; and a trench isolation structure extending from the back surface of the substrate into the substrate between the two adjacent radiation-sensing regions. The trench isolation structure includes: a dielectric material; a first film being formed between the dielectric material and the substrate; a second film being formed between the first film and the dielectric material; and a third film being formed between the second film and the dielectric material. An electronegativity of the first film, an electronegativity of the second film and an electronegativity of the third film are different from each other.

• 출원번호 : 18788176
• 출원인 : LAI, CHIH-YU
• 특허번호 :
• IPC : H01L-027/146(2006.01)

A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.

• 출원번호 : 18788717
• 출원인 : Lee, Tze-Liang
• 특허번호 :
• IPC : C23C-016/455(2006.01);H01J-037/32(2006.01);

Systems and methods for mitigating interference from a satellite gateway antenna are disclosed herein. In an embodiment, a method for mitigating interference from a satellite gateway antenna includes determining a power flux density radiation from the satellite gateway antenna in at least one direction in a horizontal plane, mounting at least one panel at an area in the at least one direction in the horizontal plane, orienting the at least one panel to have an azimuthal rotation relative to a look direction of the satellite gateway antenna in the horizontal plane, and orienting the at least one panel to have an upward tilt such that any reflection of horizontal rays of the power flux density radiation off of the at least one panel is not in the horizontal plane.

• 출원번호 : 18789175
• 출원인 : BHASKAR, Udaya
• 특허번호 :
• IPC : H01Q-017/00(2006.01)

A radiation device is wirelessly connected to a radiography device that generates dynamic image data and which controls sequential radiation. The radiation device includes a signal generator and a first determiner. The signal generator generates (i) first pulse signals emitted by the radiography device, (ii) second pulse signals synchronized with a first count value obtained by counting up the first pulse signals, and (iii) a second count value obtained by counting up the second pulse signals. The first determiner determines whether to start radiation based on a delay time which is a difference between a first time point count value and a second time point count value. The first time point count value indicates a time point at which a radiation permission signal is transmitted. The second time point count value indicates a time point at which the radiation permission signal is received.

• 출원번호 : 18787201
• 출원인 : HARA, Kentaro
• 특허번호 :
• IPC : A61B-006/00(2006.01);A61B-006/46(2006.01);A61G-003/00(2006.01);