A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The photoresist underlayer includes a polymer, including a main polymer chain having pendant target groups, and pendant organic groups or photoacid generator groups. The main polymer chain is a polystyrene, a polyhydroxystyrene, a polyacrylate, a polymethylacrylate, a polymethylmethacrylate, a polyacrylic acid, a polyvinyl ester, a polymaleic ester, a poly(methacrylonitrile), or a poly(methacrylamide). Pendant target groups are selected from the group consisting of a substituted or unsubstituted: C2-C30 diol group, C1-C30 aldehyde group, and C3-C30 ketone group. Pendant organic groups are C3-C30 aliphatic or aromatic groups having at least one photosensitive functional group, and pendant photoacid generator groups are C3-C50 substituted aliphatic or aromatic groups. A photoresist layer is formed over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation. The selectively exposed photoresist layer is developed to form a photoresist pattern.
- 출원번호 : 18776675
- 출원인 : Taiwan Semiconductor Manufacturing Company, Ltd.
- 특허번호 :
- IPC : G03F-007/11(2006.01);G03F-007/004(2006.01);G03F-007/20(2006.01);H01L-021/027(2006.01);